300W Planar Thick Film, Non-inductive High-power Resistor

Base plate center temperature ≤ 85°C, rated power 300W

• A special - shaped outer structure is designed. The chip and the outer shell are connected by springs and fixed with two M4 screws, ensuring that the attachment pressure of the heat sink is between 120 and 160 Newtons.

• The raw materials have passed UL94 - V0.

• There are five types of structures according to the height of the lead - out terminals, see page 51.

Specifications

1. Resistance value range: 0.5Ω~1MΩ

2. Resistance accuracy: ±5%~±10%

3. Temperature coefficient: ±150ppm/°C (25°C~105°C), other temperature coefficient requirements are negotiable for orders.

4. Rated power

• Rated power of 300W at 85°C, maximum working voltage not exceeding 5,000VDC.

• Short - term overload: 450W, 70°C, 10 seconds, ΔR ≤ (0.4%R + 0.001Ω).

5. Peak current

• Under low - resistance and capacitance pulse conditions, it can reach up to 1500Amp.

6. Insulation layer withstand voltage

• 6kVrms, 50Hz, 1min, up to 12kVrms according to requirements.

7. Partial discharge

• 3kVrms, <10pC; up to 5kVrms according to requirements.

8. Insulation resistance value: 500V, minimum 10GΩ.

9. Creepage distance: minimum 42mm

10. Clearance: minimum 14mm

11. Inductance: ≤80nH

12. Distributed capacitance (Mass): ≤110pF

13. Distributed capacitance (Parallel): ≤40pF

14. Moisture resistance characteristics

• 56 days/40°C, RH≥95%, ΔR ≤ (0.25%R + 0.001Ω).

1. Temperature cycle

• -55°C/+125°C (each 0.5h), 5 cycles, ΔR ≤ (0.2%R + 0.001Ω).

1. High - frequency vibration

• MIL - Std - 202, method 204, condition D, ΔR ≤ (0.2%R + 0.001Ω).

1. Power durability

• Rated power of 1,000h, base plate temperature of 85°C, ΔR ≤ (0.4%R + 0.001Ω).

1. Operating temperature range: -55°C~ +155°C

2. Lead - out terminal installation

• M4/M5 screws, maximum torque 2Nm.

1. Resistor installation

• M4 screws, maximum torque 1.8Nm.