Metal Film MELF Resistor (Pulse withstanding)
The metal film MELF resistor is renowned for its exceptional high pulse withstand capability and remarkable stability. Its rated power covers a wide range from 0.16W to 0.5W, while the resistance values are precisely distributed within a broad spectrum from 0.1 ohms to 330K ohms, offering standard tolerance options of ±1%, ±2%, and ±5% to meet diverse application needs.
This resistor not only possesses outstanding thermal dissipation efficiency, ensuring stable operating temperatures even under high load conditions, but also adopts a reinforced mechanical structure design, demonstrating exceptional endurance against vibration and extreme thermal shock environments. These characteristics collectively ensure the reliability and durability of the metal film MELF resistor under various harsh operating conditions.
| Power Rating At 70°C | Body Length (L, mm) | Cap Diameter (D1, mm) | Body Diameter (D2, mm) | Soldering Spot (B, mm) | Net Weight Per 1000 pcs |
|---|---|---|---|---|---|
| 1/6W | 3.52 ± 0.15 | 1.35 ± 0.1 | D1+0.02/ -0.15 | 0.6 Min. | 17 grams |
| 1/4W | 3.52 ± 0.15 | 1.35 ± 0.1 | D1+0.02/ -0.15 | 0.6 Min. | 17 grams |
| 1/3W | 5.90 ± 0.20 | 2.20 ± 0.1 | D1+0.02/ -0.2 | 1.0 Min. | 66 grams |
| 1/2W | 5.90 ± 0.20 | 2.20 ± 0.1 | D1+0.02/ -0.2 | 1.0 Min. | 66 grams |
| Power Rating At 70°C | Maximum Working Voltage | Maximum Overload Voltage | Minimum Resistance | Maximum Resistance | Resistance Tolerance | Available Resistance Values |
|---|---|---|---|---|---|---|
| 1/6W | 200V | 400V | 0.1Ω | 100KΩ | ±1% ±2%, ±5% | E-96 E-48/E-24 |
| 1/4W | 200V | 400V | 0.1Ω | 100KΩ | ±1% ±2%, ±5% | E-96 E-48/E-24 |
| 1/3W | 300V | 500V | 0.1Ω | 330KΩ | ±1% ±2%, ±5% | E-96 E-48/E-24 |
| 1/2W | 300V | 500V | 0.1Ω | 330KΩ | ±1% ±2%, ±5% | E-96 E-48/E-24 |
| Characteristics | Limits |
|---|---|
| Temperature Coefficient, PPM / °C° | ±1%, ±2% ±5% |
| Operating Temperature Range, °C | -55 ~ +125 |
| Insulation Resistance, MΩ | >10⁴ |
| Tin Whisker (JESD201 Temperature Cycling & High Temp. / Humidity Storage), μm | <5 |
| Failure Rate in Time, pcs / 10⁹ device hours | <1 |
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