Key Aluminum Nitride Resistance Properties to Specify When Ordering Substrates

Introduction

Aluminum Nitride (AlN) substrates are widely used in high-power electronic and optoelectronic applications due to their excellent thermal conductivity and electrical insulation properties. When ordering AlN substrates, specifying the correct resistance properties is crucial to ensure optimal performance in your application. This article outlines the key resistance properties to consider, presents relevant data, and provides solutions to common challenges in substrate selection.

Key Aluminum Nitride Resistance Properties

When ordering AlN substrates, the following resistance properties should be specified to meet application requirements:

Comparative Data of AlN Resistance Properties

The following table compares AlN resistance properties with other common substrate materials:

Common Issues in AlN Substrate Selection

One frequent problem encountered when selecting aluminum nitride substrates is thermal management in high-power applications. While AlN has excellent thermal conductivity, improper specification of resistance properties can lead to:

• Insufficient electrical insulation at high temperatures

• Current leakage due to inadequate volume resistivity

• Premature breakdown from unspecified dielectric strength requirements

• Thermal runaway in power electronics applications

Solutions for Optimal AlN Substrate Performance

To address these challenges and ensure proper aluminum nitride substrate performance in harsh environments, consider the following solutions:

For high reliability aluminum nitride substrates, it's recommended to work closely with your supplier to specify all relevant resistance properties based on your specific application requirements and operating conditions.